Title:
SEMICONDUCTOR DIODE RESISTIVE TO SURGE CURRENT WITH SOFT RECOVERY BEHAVIOR, AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2011086931
Kind Code:
A
Abstract:
To provide a semiconductor device resistive to a surge current with soft recovery behavior, and to provide a method of manufacturing the same.
A bipolar-semiconductor constituent element 100, especially a diode, includes an anode configuration controlling emitter efficiency through a method depending on a current density so as to get lower at a current density with a small emitter efficiency and get higher at a current density with a large emitter efficiency, and an option cathode configuration capable of injecting an additional hole during commutation. The method is also disclosed for manufacturing the same.
Inventors:
BABURSKE ROMAN
LUTZ JOSEF
SCHULZE HANS-JOACHIM
SIEMIENIEC RALF
LUTZ JOSEF
SCHULZE HANS-JOACHIM
SIEMIENIEC RALF
Application Number:
JP2010214783A
Publication Date:
April 28, 2011
Filing Date:
September 27, 2010
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AUSTRIA
International Classes:
H01L29/861; H01L21/329
Domestic Patent References:
| JPS6074582A | 1985-04-26 | |||
| JP2007281231A | 2007-10-25 | |||
| JPH06177404A | 1994-06-24 |
Attorney, Agent or Firm:
Sonoda Yoshitaka
Kobayashi Yoshinori
Kobayashi Yoshinori
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