Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH0653613
Kind Code:
A
Abstract:
PURPOSE: To obtain a semiconductor having a p-type electrode structure wherein contact resistance with a compound semiconductor of a p-type II-VI group can be reduced, and ohmic contact can be obtained.
CONSTITUTION: A Hg-compound semiconductor layer which is a HgSe crystal layer 15 is formed between a high-concentration p-SnSe layer 10 which is a compound semiconductor layer of p-type II-VI group and a p-type electrode metal 14. The electrode 14 is formed on the HgSe crystal layer. Therefore, the Hg compound layer having a narrow band gap is formed between the compound semiconductor of p-type II-VI group and the electrode metal, thereby contact resistance can be reduced.
Inventors:
FUKITA MUNEYOSHI
ENDO YASUYUKI
YASUMURA KENJI
ENDO YASUYUKI
YASUMURA KENJI
Application Number:
JP20208092A
Publication Date:
February 25, 1994
Filing Date:
July 29, 1992
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/43; H01L21/28; H01S5/00; H01S5/042; (IPC1-7): H01S3/18; H01L29/46
Attorney, Agent or Firm:
Soga Doteru (6 people outside)
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