Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS6226871
Kind Code:
A
Abstract:
PURPOSE:To decrease the surface deterioration during a regrowing process, by providing a carrier accelerating layer between a light-absorbing layer and layers having a P-N junction, the carrier accelerating layer being formed to be thicker, in the portion facing to the light-receiving section, than the portion facing to a protection ring and having a band gap larger than that of the light- receiving layer and smaller than that of the layers having the P-N junction. CONSTITUTION:A carrier accelerating layer 8 provided on a carrier accelerating layer 3 has a stepped portion facing to the light-receiving section 6, the stepped portion being thicker than the portion facing to a protection ring 7. The carrier accelerating layer 8 is formed of mixed crystals having a band gap larger than those of a light-absorbing layer 2 and the carrier accelerating layer 3 but smaller than those of P-N junction layers 5 and 6 having the P-N junction. According to this method, a multiplication layer 5 can be grown after the formation of the stepped portion with decreased effect of deterioration during the regrowing process. Accordingly, noises due to defects produced by the deterioration can be also decreased. Further, the semiconductor device can be provided with an ability of selecting wavelength.
Inventors:
OTSUKA KENICHI
MATSUI TERUHITO
MATSUI TERUHITO
Application Number:
JP16652485A
Publication Date:
February 04, 1987
Filing Date:
July 27, 1985
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L31/107; H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JPS59232470A | 1984-12-27 | |||
| JPS58215084A | 1983-12-14 | |||
| JPS5731183A | 1982-02-19 |