Title:
トレンチ絶縁部を有する半導体素子およびその製造方法
Document Type and Number:
Japanese Patent JP5255593
Kind Code:
B2
Abstract:
The invention relates to a semiconductor component with trench isolation and to an associated fabrication method, a trench isolation (STI, TTI) having a deep isolation trench with a covering insulation layer (10, 11), a side wall insulation layer (6) and an electrically conductive filling layer (7), which is electrically connected to a predetermined doping region (1) of the semiconductor substrate in a bottom region of the trench. The use of a trench contact (DTC), which has a deep contact trench with a side wall insulation layer (6) and an electrically conductive filling layer (7), which is likewise electrically connected to the predetermined doping region (1) of the semiconductor substrate in a bottom region of the contact trench, makes it possible to improve the electrical shielding properties with a reduced area requirement.
Inventors:
Schuler, Franz
Georg, Tempel
Georg, Tempel
Application Number:
JP2010094488A
Publication Date:
August 07, 2013
Filing Date:
April 15, 2010
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AG
International Classes:
H01L21/28; H01L21/76; H01L21/3065; H01L21/762; H01L21/763; H01L27/08
Domestic Patent References:
| JP63276263A | ||||
| JP2000269317A | ||||
| JP2001110890A | ||||
| JP2001291863A | ||||
| JP2001185721A |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office