Title:
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
Japanese Patent JP2023064329
Kind Code:
A
Abstract:
To provide a technique capable of relaxing a stress to an insulation member and improving reliability in a semiconductor device.SOLUTION: A semiconductor device 50 comprises an insulation layer 3, a circuit pattern 4 provided on an upper surface of the insulation layer 3, a semiconductor element 5 joined to an upper surface of the circuit pattern 4 by a first joining material 7a, an insulation member 6 joined to the upper surface of the circuit pattern 4 by a second joining material 7b, and a lead electrode 9 connecting the semiconductor element 5 and the insulation member 6. An upper surface of the semiconductor element 5 and a lower surface of the lead electrode 9 are joined by a third joining member 7c, and an upper surface of the insulation member 6 and the lower surface of the lead electrode 9 are joined by a fourth joining member 7d. The first joining member 7a, the second joining member 7b, the third joining member 7c, and the fourth joining member 7d are made of the same material.SELECTED DRAWING: Figure 1
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Inventors:
NISHIYAMA MASAYUKI
YONEYAMA REI
YOSHIMATSU NAOKI
ARAKI SHINTARO
KAWASE TATSUYA
MASUMOTO HIROYUKI
YONEYAMA REI
YOSHIMATSU NAOKI
ARAKI SHINTARO
KAWASE TATSUYA
MASUMOTO HIROYUKI
Application Number:
JP2021174549A
Publication Date:
May 11, 2023
Filing Date:
October 26, 2021
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L25/07; H01L23/34
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita