SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Title:

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Document Type and Number:

Japanese Patent JPH01253253

Kind Code:

A

Abstract:

PURPOSE: To make it possible to measure easily a leakage current (IQ) and to shorten the time for creating a program by a method wherein switching transistors for interrupting a current are inserted in series to the pull-up resistors and the pull-down resistor of an input/output cell part.

CONSTITUTION: Switching transistors Trs 45, 46 and 47 for interrupting a current are inserted in series to pull-up resistors 35 and 43 and a pull-down resistor 36 of an input/output cell part. If a testing terminal 49 is turned to an 'L' level at the time of an measurement of an IQ, the Trs 45, 46 and 47 can be brought into an 'OFF' state. A current path is interrupted through the resistors 35, 36 and 43 and the IQ only is easily measured in isolation. Thereby, the time for, creating a program is shortened.

Inventors:

MIZOBE SUMIO

Application Number:

JP8110088A

Publication Date:

October 09, 1989

Filing Date:

April 01, 1988

Export Citation:

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Assignee:

SEIKO EPSON CORP

International Classes:

H01L21/66; H01L21/82; H01L21/822; H01L27/04; H01L27/118; G01R31/28; (IPC1-7): G01R31/28; H01L21/66; H01L21/82; H01L27/04

Attorney, Agent or Firm:

Masanori Ueyanagi (1 outside)

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