PURPOSE: To obtain a semiconductor integrated circuit having the excellent stability of the potential of VPP by inhibiting leakage currents due to the lowering of VPP potential by leakage currents from VPP at a time when L is output to the output node <OUT> of a high voltage switch.

CONSTITUTION: A semiconductor integrated circuit device has a boosting circuit 10 by a capacitive coupling 5 having supply voltage VPP higher than internal supply voltage VCC. A clock - input to the boosting circuit 10 is input to one terminal of a 2 NAND 6, and a signal based on an input signal IN to the boosting circuit 10 is input to the other terminal of the 2NAND 6, and a clock is controlled.