Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPS60127740
Kind Code:
A
Abstract:
PURPOSE:To integrate a diode having a low forward rising voltage or other element stably in a semiconductor integrated circuit by setting the impurity density of regions of forming the diode independently from regions of forming other diode or a bipolar transistor. CONSTITUTION:A diode D1 which has regions 21A and 35 is formed in the same specific resistance portion 21B as a high specific resistance substrate 21, and a transistor Q and a diode D2 are formed on regions 21A, 21D in which specific resistance is lowered for the transistor or other diode by applying an impurity. Since the region 21B of part of the substrate 21 to become an anode of the diode D1 has a high resistance, a barrier of the junction of the diode D1 is low, and can rise with a low voltage. On the other hand, the diode D2 uses the region 21C having a density higher than the substrate 21 as an anode, has high barrier of its junction and is used for a normal utility. When the diode D1 is combined with the transistor Q and connected as l1, l2, characteristics similar to a Schottky transistor as shown can be obtained.
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Inventors:
TAKEMOTO TOYOKI
FUJITA TSUTOMU
KAWAKITA KENJI
SAKAI HIROYUKI
FUJITA TSUTOMU
KAWAKITA KENJI
SAKAI HIROYUKI
Application Number:
JP23667283A
Publication Date:
July 08, 1985
Filing Date:
December 15, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/8222; H01L21/331; H01L21/76; H01L21/762; H01L27/06; H01L29/73; H01L29/732; H01L29/866; (IPC1-7): H01L27/06; H01L29/72; H01L29/90
Domestic Patent References:
| JPS5612749A | 1981-02-07 | |||
| JPS57154855A | 1982-09-24 | |||
| JPS56140662A | 1981-11-04 | |||
| JPS57154856A | 1982-09-24 | |||
| JPS5340875A | 1978-04-13 |
Attorney, Agent or Firm:
Akira Kobiji (2 outside)