PURPOSE: To minimize wiring-caused parasitic capacity by rendering an interlayer insulating film thicker than a MIM capacitor insulating film and thereby to increase the capacity per unit area of the MIM capacitor by a method wherein the interlayer insulating film has a two-layer laminate in structure and the MIM capacitor insulating film is built of one of the two layers only.
CONSTITUTION: Si ions are implanted into a semi-insulating GaAs substrate 4 for the formation of an implanted layer 5. A lower electrode wiring layer 6 to constitute a lower electrode of a MIM capacitor and metals for an FET and a resistance element are built of AuGe/Ni/Au. Further, the gas electrode 7 of the FET is built of Ti/Al. At this stageof the manufacturing system, insulating films are formed. First, a 5,000-thick SiO2 film is formed by CVD to be a first layer insulating film A11, the SiO2 film is then removed from the region for the MIM capacitor, and then a 3,000-thick Si3O4 film is formed by plasma CVD to be a second layer insulating film B12. Thereafter, an upper electrode wiring layer 9 containing the upper electrode of the MIM capacitor is built of Ti/Au.
OGIO MASAHIRO
KAZUMURA MASARU
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