Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPH0387057
Kind Code:
A
Abstract:
PURPOSE: To improve the freedom of wiring by connecting wiring with contact holes formed in a diffused resistance layer, covering contact holes with interlayer insulating films, and forming other wiring thereon.
CONSTITUTION: Contact holes 5a-5c are formed in a silicon nitride film of a diffusion resistance layer on a semiconductor substrate 1. When the holes 5b, 5d with which a wiring 9 is not connected are covered with silicon oxide films 7 of interlayer insulating films, other wirings 11 can be arranged on the films 7. As a result, the wiring freedom of a semiconductor integrated circuit can be increased.
Inventors:
AYABE TOSHIJI
Application Number:
JP22609589A
Publication Date:
April 11, 1991
Filing Date:
August 30, 1989
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L27/04; H01L21/82; H01L21/822; H01L27/118; (IPC1-7): H01L27/04; H01L27/118
Attorney, Agent or Firm:
Uchihara Shin
Next Patent: JPH0387058