Title:
SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2004158637
Kind Code:
A
Abstract:
To provide a ridge semiconductor laser device with a low current threshold.
An upper clad layer 14 comprising a ridge part 14a is disposed on an active layer 12. The active layer has a first region 26 positioned right under the ridge part and second regions 27 and 28 adjacent to both sides of the first region 26. The second regions comprise H+ by concentration of not less than 1×1017 atoms/cc, and therefore resistance is made high. Consequently, a current constriction structure is formed in the active layer and the current threshold is reduced.
Inventors:
SAGA NORIHIRO
Application Number:
JP2002322737A
Publication Date:
June 03, 2004
Filing Date:
November 06, 2002
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01S5/22; (IPC1-7): H01S5/22
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Masatoshi Shibata
Ikeda adult
Tatsuya Shioda
Shiro Terasaki
Masatoshi Shibata
Ikeda adult
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