Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
Japanese Patent JP3676029
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the generation of the interface state density at the adhesive interface especially and to prevent the generation of the characteristics by the effect of the interface state density by providing an adhesive layer, by which the mutual lattice constants at the adhesive interface are made to agree or approach, between semiconductors, which are directly adhered.
SOLUTION: The semiconductor layers forming the junction interface by direct adhesion are an InGaP adhesive layer 24 on an n-InP substrate 21 and an InGaP adhesive layer 29 on a p-GaAs substrate 25. The lattice constants of the layers are equal. Therefore, the density of the dangling bond caused by the difference of the lattice constants becomes the small value that can be negleted, and the adverse effect caused by the interface state density at the adhesive interface does not occur. In details, the occurrence of non-radiative recombination of carriers can be prevented. Furthermore, since the clad layer having the large band gap is provided on the side of (p), the overflow of electrons can be suppressed, and the deterioration of the temperature characteristics of a semiconductor device in a long wavelength band can be suppressed.
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Inventors:
Norihiro Iwai
Muichihara Tomokazu
Kazuaki Nishikata
Akihiko Kasukawa
Muichihara Tomokazu
Kazuaki Nishikata
Akihiko Kasukawa
Application Number:
JP9766997A
Publication Date:
July 27, 2005
Filing Date:
April 15, 1997
Export Citation:
Assignee:
THE FURUKAW ELECTRIC CO.,LTD.
International Classes:
H01S5/06; H01L21/02; H01S5/183; H01S5/343; (IPC1-7): H01S5/343; H01L21/02; H01S5/183
Domestic Patent References:
| JP9331105A | ||||
| JP8340146A | ||||
| JP7335967A | ||||
| JP6318760A | ||||
| JP9167877A |
Attorney, Agent or Firm:
Koji Nagato