Title:
半導体レーザ装置
Document Type and Number:
Japanese Patent JP7322065
Kind Code:
B2
Abstract:
Semiconductor laser device A1 includes semiconductor laser element 4, switching element 5 having gate electrode 52, source electrode 53 and drain electrode 54, and support member 1 having conductive part 3 that forms a conduction path to switching element 5 and semiconductor laser element 4 and supports semiconductor laser element 4 and switching element 5. Conductive part 3 has front surface first section 311 spaced apart from semiconductor laser element 4. Semiconductor laser device A1 includes at least one first wire 71 connected to source electrode 53 of switching element 5 and semiconductor laser element 4 and also at least one second wire 72 connected to source electrode 53 of switching element 5 and front surface first section 311 of conductive part 3. Such an arrangement reduces the inductance component of semiconductor laser device A1.
Inventors:
Atsushi Yamaguchi
Kouki Sakamoto
Kouki Sakamoto
Application Number:
JP2020559895A
Publication Date:
August 07, 2023
Filing Date:
November 20, 2019
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01S5/02345; H01S5/026
Domestic Patent References:
| JP2009059929A | ||||
| JP2005050896A |
Attorney, Agent or Firm:
Hisashi Usui
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