To provide a semiconductor laser element capable of suppressing a variation of a horizontal radiation angle and of raising a kink property, and to provide a method of manufacturing the semiconductor laser element.

A red semiconductor laser element is equipped with an n-type AlGaInP bottom cladding layer 4, a GaInP/AlGaInP multiple quantum well active layer 5, and a GaInP etching stop layer 7. On the GaInP etching stop layer 7, there is formed a ridge 17 including a p-type AlGaInP second top cladding layer 8. While existing in a near region of the ridge 17, the GaInP etching stop layer 7 doesn't exist in an isolated region distant from the near region from the ridge 17.