PURPOSE: To prevent impurity concentration decrease by alternately laminating a first layer in which an impurity is added to either first or second clad layer and a second layer having a larger band gap than the first layer to be formed.
CONSTITUTION: A semiconductor laser element mainly comprises an electrode 1, a substrate 2, a clad layer 3, an optical guide layer 4, a single quantum well active layer 5, an optical guide layer 6, a p-type ZnSSe/ZnMgSSe superlattice clad layer (superlattice clad layer) 7, a p-type ZnSSe layer 8, a contact layer 9, an insulating film 10 and an electrode 11. An active region 12 has the layer 4, the layer 5 and the layer 6. The layer 7 is obtained by alternately laminating a p-type nitrogen-doped ZnSSe layer having a small band gap and a relatively low resistance to be a first layer and an ZnMg'SSe layer having large band gap and relatively high resistance to be a second layer. Thus, the band gap of the entire layer 7 can be increased, and the resistance can be reduced.
IMAIZUMI MASAYUKI
ENDO YASUYUKI
FUKITA MUNEYOSHI
ISU TOSHIRO
MITSUNAGA KAZUMASA
