Title:
半導体レーザ素子
Document Type and Number:
Japanese Patent JP4816436
Kind Code:
B2
Abstract:
A semiconductor laser device have, on a substrate, a semiconductor layer including an active layer sandwiched between an n-type layer and a p-type layer, the semiconductor layer having a sonator face formed by etching and a projection projecting out in an emission direction relatively to the resonator face, wherein a protective film is formed to extend from the resonator face to an end face of the projection, and, an emission critical angle, which is the largest angle at which light emitted from the resonator face can be radiated without being blocked by the projection and the protective film formed on the projection, is larger than an emission half-angle of an emission distribution in a vertical direction of a laser beam emitted from the resonator face.
Inventors:
Furukawa Yoshihiko
Makoto Shimada
Aki Kiuchi
Masao Ochiai
Masayuki Senoo
Makoto Shimada
Aki Kiuchi
Masao Ochiai
Masayuki Senoo
Application Number:
JP2006337984A
Publication Date:
November 16, 2011
Filing Date:
December 15, 2006
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01S5/028; H01S5/10; H01S5/02
Domestic Patent References:
| JP11074615A | ||||
| JP9223844A | ||||
| JP8191171A |
Attorney, Agent or Firm:
Yukio Ono
Horikawa Kaori
Horikawa Kaori