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Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP3871981
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of oscillating with a desired wavelength in a wide variable width of a wavelength without loosing a property required as an optical source for telecommunication.
SOLUTION: There are provided a gain region 12 for performing laser oscillation by inflow of current; a COM type reflecting mirror region 14 provided at one side of the gain region 12 and including a diffraction grating whose pitch varies gradually and periodically; a DBR region 22a, 22b, 22c, 22d provided at the other side of the gain region 12, and including a plurality of distribution reflecting mirrors equipped with the diffraction gratings whose period are different from one another; and a tapered waveguide type light convergence receptacle 18 that is provided between the COM type reflecting mirror region 14 and the DBR region 22a, 22b, 22c, 22d, and couples each of the plurality of distribution reflecting mirrors optically to one another in the COM type reflecting mirror region 14 and the DBR region 22a, 22b, 22c, 22d via the gain region 12.


Inventors:
Tokuhiko Sekine
Application Number:
JP2002228799A
Publication Date:
January 24, 2007
Filing Date:
August 06, 2002
Export Citation:
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Assignee:
富士通株式会社
International Classes:
H01S5/125; (IPC1-7): H01S5/125
Domestic Patent References:
JP2001007439A
JP2002006352A
JP6053616A
JP6061572A
JP1199487A
JP4107977A
Foreign References:
WO2001017073A1
Attorney, Agent or Firm:
Yoshito Kitano
Haruhiko Mimura