To provide a semiconductor light emitting device which can improve the detection accuracy of optical output by a simple structure.
The semiconductor light emitting device is provided with a light emitter 2, an optical detector 3, and a light controller 4. The light emitter 2 is provided with a semiconductor lamination structure 20 including one or a plurality of light emitting areas 15A, a light emitting light is given from the light emitting area 15A in a parallel direction to the lamination direction of the semiconductor lamination structure 20. The optical detector 3 is provided with a semiconductor lamination structure 30 including a light absorption layer 11 to absorb a part of incident lights, as well as an exposed face 11A in a plane vertical to the lamination direction of the semiconductor lamination structure 30. The optical detector 3 and the light emitter 2 are made integral. The light controller 4 is formed including a material that can be molded by heat treatment. It is also provided with a boundary face 4A to reflect a part of light emitted from the light emitter 2 as well as to allow the reflected light to directly enter into the exposed face 11A.
COPYRIGHT: (C)2007,JPO&INPIT
ARAKIDA TAKAHIRO
YAMAUCHI YOSHINORI
YAMAGUCHI NORIHIKO
MASUI TAKESHI
| JPH04207091A | 1992-07-29 | |||
| JPH08330679A | 1996-12-13 | |||
| JP2002217481A | 2002-08-02 | |||
| JPH09307144A | 1997-11-28 |
Yasushi Santanzaki
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