To provide a semiconductor light emitting device which is satisfactory in assembly workability.

A semiconductor light emitting device 1 is equipped with a first semiconductor layer 3, formed on an insulating board 2 and a second semiconductor layer 5 formed on the first semiconductor layer 3 through the intermediary of a light-emitting layer 4, where a conductive layer (n-electrode) 11 is formed on the side 10 of the semiconductor light emitting device 1, and a groove 12 is cut in the top surface 9 of the device 1 as deep as a halfway point in the thickness of the first semiconductor layer 3 and in parallel with the side 10 which penetrates through the light emitting layer 4.