Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE
Document Type and Number:
Japanese Patent JPH07193325
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor light emitting element capable of operating in low current stable for return light.
CONSTITUTION: Within a microresonator type light emitting element wherein a quantum well light emitting layer 6 is held between semiconductor multilayer films (Bragg reflectors) 4, 11, n-type impurities are added to this quantum well layer 6. At this time, since the photoabsorption into the light emitting layer 6 can be notably reduced, the microresonator type light emitting element can be operated in low current. Through these procedures, the title high performance semiconductor light emitting device whereto the light source for an optical fiber gyrocompass and a photo-interconnect is applicable can be provided.
Inventors:
OTOSHI SO
KAYANE NAOKI
YAMANISHI MASAMICHI
KAYANE NAOKI
YAMANISHI MASAMICHI
Application Number:
JP33050093A
Publication Date:
July 28, 1995
Filing Date:
December 27, 1993
Export Citation:
Assignee:
HITACHI LTD
UNIV HIROSHIMA
UNIV HIROSHIMA
International Classes:
H01L33/06; H01L33/10; H01L33/20; H01L33/28; H01L33/30; H01L33/40; H01S5/00; (IPC1-7): H01S3/18; H01L33/00
Attorney, Agent or Firm:
Ogawa Katsuo