SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE

Japanese Patent JP3822318

B2

PROBLEM TO BE SOLVED: To form, at low strain, an AlGaN layer having a high-quality Al composition on a substrate, which is not lattice-matched and to enhance the element characteristic of a short wavelength light emitting element.
SOLUTION: In a semiconductor light emitting element, a GaN-based compound semiconductor layer is laminated on a single crystal substrate. The semiconductor light emitting element has a layer structure, wherein an AlN buffer layer 103 and a GaN lattice strain relaxation layer 105 whose lattice constant is larger than that of AlN are laminated sequentially on a single crystal SiC substrate 101 and an n-type AlGaN contact layer 107 whose lattice constant is larger than that of AlN and whose lattice constant is smaller than that of GaN is laminated on the GaN lattice strain relaxation layer 105. In addition, the film thickness of the GaN lattice-strain relaxation layer 105 is set between 0.01 μm and 0.5 μm.

Yasuo Ohba
Hiroaki Yoshida

JP19262597A

September 20, 2006

July 17, 1997

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Toshiba Corporation

H01S5/323; H01L33/12; H01L33/14; H01L33/32; H01S5/00; H01S5/02; H01S5/32; (IPC1-7): H01S3/18; H01L33/00

JP9027636A
JP7249795A
JP8064868A
JP7235692A
JP10303458A
JP10303510A
JP5211347A
JP8330677A
JP8070139A
JP8274411A
JP9083079A

WO1995017019A1

Yasuo OHBA他,Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate,Japanese Journal of Applied Physics,日本,1996年 8月15日,Vol. 35, Part 2, No. 8B,1013-1015

Takehiko Suzue
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai

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