PURPOSE: To provide a highly reliable low-power-consumption semiconductor light emitting element capable of thresholdless operation by flattening it thereby facilitating the stacking integration with other optical function element, and enabling a microresonator to be formed easily, concerning a semiconductor light emitting element, and its manufacture.

CONSTITUTION: A first conductivity type semiconductor multilayer reflector 2 is formed on a first conductivity type semiconductor substrate 1, and thereon a block layer 4 consisting of a semiconductor layer having a large band gap is formed, and an opening is formed by removing one part of this block layer 4, thus a resonator structure 13 is formed all over the surface of the block layer 4 having an opening. It is flattened by removing the section being made on the block layer 4 of this resonator structure, and thereon an opposite conductivity type of semiconductor multilayer film reflector 14 is formed, and an electrode 16 is formed on a light nonemission face, and an electrode 17 and a nonreflecting coating are formed on a light emission face. A resonator mesa is formed on the first conductivity type of multilayer film reflector 2, and then a block layer can be made around it.