To provide a semiconductor light-emitting element capable of improving light-emitting efficiency, an optical pickup device, a light source device, and a method of manufacturing the semiconductor light-emitting element.
The semiconductor light-emitting element includes a base layer 1, having a nonpolar face of a wurtzite crystal structure and a polarity plane orthogonal to the direction along the nonpolar face and two or more quantum wire active layers 2 that is formed on a growth face 1A, which is the nonpolar face of the base layer 1, and is constituted of a group III nitride semiconductor, having a different lattice constant from that of the base layer 1 in the nonpolar face 1A; and the quantum wire active layers 2 is formed so as to extend in the normal direction (c-axis direction) of the polarity plane.
OYA MASATERU
NANBAE KOICHI
MATSUDATE MITSUKI
MASUMOTO ICHIRO
