Title:
SEMICONDUCTOR LIGHT RECEIVING ELEMENT
Document Type and Number:
Japanese Patent JPS60163470
Kind Code:
A
Abstract:
PURPOSE:To effectively operate the titled element as a large-aperture photo diode of low dark-current and low capacitance by a method wherein this element is formed into a plano-convex lens where the surface of a one conductivity type semiconductor layer is the light receiving plane, and said surface forms a convex curved plane, and the surface on the side of a reverse conductivity type semiconductor layer forms a plane. CONSTITUTION:The titled element equipped with the one conductivity type semiconductor layer made by successive formation of an N type buffer layer 12, an N type InGaAs photo absorption layer 13, and an N type InP cap layer 14 on an N type InP substrate 11, and with a P<+> region 15 as the reverse conductivity type layer in the one conductivity type semiconductor layer is formed into a plano-convex lens where the surface of the InP substrate 11 is the light receiving plane, and this light receiving plane forms a convex curved plane, and the surface on the side of the P<+> region 15 forms a plane. The numeral 16 represents a surface protection film, 17 the P-side electrode, 18 the N-side electrode, and 19 a reflection-preventing film.
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| WO/2010/007890 | DISPLAY DEVICE |
| WO/2001/093340 | POSITION SENSITIVE PHOTO DETECTOR |
Inventors:
SUGIMOTO YOSHIMASA
Application Number:
JP1772684A
Publication Date:
August 26, 1985
Filing Date:
February 03, 1984
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L31/10; H01L31/0232; H01L31/103; (IPC1-7): H01L31/10
Domestic Patent References:
| JPS4857589A | 1973-08-13 |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)