Title:
SEMICONDUCTOR MANUFACTURING DEVICE AND ITS METHOD FOR TRANSFERRING WAFER
Document Type and Number:
Japanese Patent JP3239977
Kind Code:
B2
Abstract:
PURPOSE: To improve throughput, simplify the device and suppress wafer contamination due to particles by transferring the wafer in the atmospheric air permitting the increase of a natural oxide film on the surface of the wafer to be within a range that does not cause actual trouble.
CONSTITUTION: A wafer cassette 26 loaded with wafers 25 is stored on a cassette shelf 24. The wafer 25 taken out from the wafer cassette 26 in the atmospheric air is loaded on a boat 18. Since it takes approximately 15 minutes to transfer all the wafers 25 to the boat 18, the increase of the natural oxide film on the wafer 25 is not more than 1&angst and the increase causes almost no influence to product manufacture. Then, inside of the load lock chamber 17 is filled with nitrogen gas, and the wafer 25 is transferred to the reaction chamber 15. Thus structure is simplified with one air-tight chamber, operation sequence of the device is simplified, and since nitrogen gas substitution is performed only for the load lock chamber, transfer cycle time is shortened and throughput is improved.
Inventors:
Makoto Ozawa
Mitsuhiro Hirano
Mitsuhiro Hirano
Application Number:
JP9438195A
Publication Date:
December 17, 2001
Filing Date:
March 28, 1995
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/677; B65G49/07; H01L21/205; H01L21/22; H01L21/31; H01L21/68; (IPC1-7): H01L21/68
Domestic Patent References:
| JP6224145A | ||||
| JP521421A |
Attorney, Agent or Firm:
Shoji Miyoshi