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Title:
SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012109581
Kind Code:
A
Abstract:

To provide a semiconductor manufacturing method capable of easily forming a desired circuit by print processing in a wafer state after a wafer test and a semiconductor device.

A semiconductor manufacturing method comprises: a step of forming a groove part having a predetermined depth in a drawn pattern formation region of a wafer; a step of inspecting whether trimming is required for the wafer; a step of injecting a conductive solvent into the groove part of the wafer which requires the trimming and drawing a drawing pattern; a step of performing deaeration and low-temperature annealing after drawing the drawing pattern; a step of planarizing a film-formation surface after deaeration and low-temperature annealing were performed to form a film; and a step of performing high-temperature annealing after planarizing the film-formation surface.


Inventors:
SHIMIZU KAZUHIRO
AKIYAMA HAJIME
YASUDA NAOKI
Application Number:
JP2011276921A
Publication Date:
June 07, 2012
Filing Date:
December 19, 2011
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/768; H01L21/288; H01L21/3205; H01L21/336; H01L21/82; H01L21/822; H01L21/8234; H01L21/8247; H01L23/522; H01L27/04; H01L27/088; H01L27/10; H01L27/115; H01L29/739; H01L29/78; H01L29/788; H01L29/792
Domestic Patent References:
JP2004267874A2004-09-30
JP2005129922A2005-05-19
JP2004273679A2004-09-30
JP2005199269A2005-07-28
JP2004141856A2004-05-20
JP2003059940A2003-02-28
Attorney, Agent or Firm:
Takuji Yamada
Mitsuo Tanaka