Title:
半導体メモリ装置
Document Type and Number:
Japanese Patent JP4224678
Kind Code:
B2
Abstract:
A semiconductor memory device that generates, during a test operation, a burst control signal having a short pulse in a disable time of a burst control signal by using a pulse generator to control a precharge time. Accordingly, the semiconductor memory device, when receiving a high frequency operation clock signal, can be tested without delay of a test time by using a test circuit operated synchronously with a low frequency operation clock signal.
Inventors:
Kim Tae Jun
Application Number:
JP2002283223A
Publication Date:
February 18, 2009
Filing Date:
September 27, 2002
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
G01R31/28; G01R31/3183; G11C29/12; G11C7/10; G11C7/12; G11C11/401; G11C11/407; G11C29/00; G11C29/14
Attorney, Agent or Firm:
Eiji Saegusa
Kakehi Yuro
Takeshi Ohara
Hiroji Nakagawa
Yasumitsu Tate
Kenji Saito
Jun Fujii
Hitoshi Seki
Mutsuko Nakano
Shinichi Mashita
Ryuji Inuchi
Kakehi Yuro
Takeshi Ohara
Hiroji Nakagawa
Yasumitsu Tate
Kenji Saito
Jun Fujii
Hitoshi Seki
Mutsuko Nakano
Shinichi Mashita
Ryuji Inuchi
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