Title:
Semiconductor memory device
Document Type and Number:
Japanese Patent JP6122212
Kind Code:
B2
Abstract:
It is possible to realize a highly reliable semiconductor storage device using the semiconductor storage device which includes a plurality of memory chains including a plurality of memory cells connected in series and in which the memory cell is a storage element that performs rewrite using a cell transistor and current, the memory chain has a structure in which the storage elements are connected in parallel, a power-supply voltage and a ground voltage are supplied from an outside, and a voltage to be used for the rewrite of the storage element is lower than the ground voltage, and further, it is possible to realize the semiconductor storage device that has a large capacity, is capable of high-speed read and write, and can be manufactured with low cost.
Inventors:
Kenzo Kurochi
Yoshitaka Sasako
Satoru Hanzawa
Yoshitaka Sasako
Satoru Hanzawa
Application Number:
JP2016508384A
Publication Date:
April 26, 2017
Filing Date:
March 19, 2014
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
G11C13/00; G11C11/15
Domestic Patent References:
| JP2011114016A | ||||
| JP2012174818A |
Foreign References:
| WO2013183101A1 | ||||
| WO2012032730A1 |
Attorney, Agent or Firm:
Aoritsu patent business corporation
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