To provide a semiconductor memory device whose current consumption is smaller than that of a device of a conventional constitution of a method wherein a precharge auxiliary switch is employed.

The precharge circuit UPRi of an upper sense amplifier part USAi precharges the corresponding pair of bit lines UBi and XUBi to a power supply potential VDD. On the other hand, the precharge circuit LPRi of a lower sense amplifier unit LSAi precharges the corresponding pair of bit lines LBi and XLBi to a ground potential VSS. In a precharge operation, 1st and 2nd sense amplifier driving signal lines VSN and VSP are short-circuited by a precharge auxiliary switching means SWSH. With this constitution, charge is transferred between the bit line whose potential is shifted from the precharge potential VDD and the bit line whose potential is shifted from the precharge potential VSS and a current required for the precharge operation can be reduced significantly.