PURPOSE: To shorten the time of word line driving to reduce the access time, by driving word lines, where the characteristic impedance is lessened with division, by a semiconductor inversion amplifying circuit of a high driving power.
CONSTITUTION: A word line W is divided in the row direction into N-number word lines, and (N-1)-number semiconductor inversion amplifying circuits are used in every one row, and the nth (1≤n≤N-1) out of N-number divided word lines is connected to the input terminal of the nth semiconductor inversion amplifying circuit. The (n+1)th word line is connected to the outpt terminal of the nth semiconductor inversion amplifying circuit, and one or plural first cells are connected to odd-numbered (even-numbered) word lines out of N-number divided word lines, and one or plural second cells are connected to even-numbered (odd- numbered) word lines. An N channel field effect transistor TR is used as a cell selecting TR in the first cell, and a P channel field effect TR is used as a cell selecting TR in the second cell.
MANO TSUNEO
SAWADA HIROTOSHI
