Title:
SEMICONDUCTOR MEMORY ELEMENT AND MANUFACTURE OF THE SAME
Document Type and Number:
Japanese Patent JP3650807
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a semiconductor memory element for obtaining high-speed and low power characteristics, and a method for manufacturing this.
SOLUTION: This semiconductor memory element includes a first insulating layer 13, including first and second contact holes, a first element separated film 12a, a second element separated film 12b, a pair of trench layers 24 formed in the semiconductor layer, a cell transistor 40a, a drive transistor 40b, a capacitor 20, a dummy pattern, a third contact hole, a conductive layer, a third insulating layer, and a base substrate bonded to the third insulating layer.
Inventors:
Lee Jong
Z Kei Tin
Z Kei Tin
Application Number:
JP36162399A
Publication Date:
May 25, 2005
Filing Date:
December 20, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
H01L27/00; H01L21/8242; H01L27/108; H01L27/12; H01L29/786; (IPC1-7): H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
| JP11317506A | ||||
| JP6104410A | ||||
| JP10056183A | ||||
| JP7183469A | ||||
| JP10022471A |
Attorney, Agent or Firm:
Kyosei International Patent Office
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