Title:
SEMICONDUCTOR MEMORY AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH04218958
Kind Code:
A
Abstract:
PURPOSE: To provide a capacitor with high charge storage and its manufacture by making irregularity on the surface of a charge storage electrode.
CONSTITUTION: Irregular parts are formed on a surface (first surface 605) facing to the layer insulation film 607 of a charge storage electrode and other surface (second surface 609) and a plate electrode 613 is formed on the first surface 605 and second surface 609 so that a capacitor with high charge storage is obtained.
Inventors:
TAKAHASHI EIZABURO
TAKAHASHI MASASHI
OZAWA NOBUO
NITTAMI KENJI
TAKAHASHI MASASHI
OZAWA NOBUO
NITTAMI KENJI
Application Number:
JP7650591A
Publication Date:
August 10, 1992
Filing Date:
April 09, 1991
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/302; H01L21/3065; H01L21/822; H01L21/8242; H01L27/04; H01L27/10; H01L27/108; (IPC1-7): H01L21/302; H01L27/04; H01L27/108
Attorney, Agent or Firm:
Toshiaki Suzuki