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Title:
SEMICONDUCTOR MEMORY AND ITS TEST METHOD
Document Type and Number:
Japanese Patent JP2003085998
Kind Code:
A
Abstract:

To provide a semiconductor memory which can perform confirmation of presence or absence of a short circuit of word lines and pairs of bit lines in a manufacturing process and specifying a short circuit part, in wafer state and to provide its test method.

This memory is provided with a first power source VBL which can be connected to a plurality of pairs of bit line BL-L/BL-L through transistors and which gives the prescribed potential to each pair of bit line when connected, and a second power source VBL1 which can be connected to a local IO line, can be connected to the prescribed pair of bit line by selection of a column selection line CSL by an external address, and which gives the prescribed potential when connected, and in pre-charge operation of a test mode, the first power source is separated from each pair of bit line, while voltage is applied to the prescribed pair of bit line from the second power source, a bit line short-circuiting to a word line WL is specified by measuring a leak current.


Inventors:
SEKIGUCHI HIDEO
Application Number:
JP2001278467A
Publication Date:
March 20, 2003
Filing Date:
September 13, 2001
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G11C11/413; G11C11/401; G11C29/00; G11C29/04; (IPC1-7): G11C29/00; G11C11/401; G11C11/413
Attorney, Agent or Firm:
Mamoru Takada (3 outside)