PURPOSE: To realize a semiconductor optical device of structure excellent in efficiency to effectively trap holes and electrons in a light emitting layer by a method wherein a diode structure possessed of a PN junction is formed, a voltage is applied in a forward direction, and a current is injected.
CONSTITUTION: An N-type Si0.7Ge0.3 buffer layer 12 is grown on an N-type Si substrate 11 thicker than a critical thickness, and furthermore an Si0.7Ge0.3 buffer layer 13 not intentionally doped are made to grow thereon. An Si0.9Ge0.1 layer 14, an Si0.7Ge0.3 layer 15, an Si0.9Ge0.1 layer 16, an Si0.7Ge0.3 layer 17, an Si0.9Ge0.1 layer 18, a P-type Si0.9Ge0.1 layer 19, a hot CVD SiO2 film 20, an electrode 21, and an electrode 22 are formed thereon in a lattice matching manner to form a semiconductor optical device. Therefore, electrons are accumulated in the Si0.9Ge0.1 layers, and holes are accumulated in the Si0.7Ge0.3 layer, whereby a semiconductor optical device excellent in efficiency wherein no phonon exists at a room temperature can be obtained.
NISHIDA AKIO
SHIMADA JUICHI
