Title:
半導体光素子
Document Type and Number:
Japanese Patent JP4085953
Kind Code:
B2
Abstract:
A semiconductor optical device (1) comprises a superlattice contact semiconductor region (3) and a metal electrode (5). The superlattice contact semiconductor region (3) has a superlattice structure. The superlattice contact semiconductor region (3) includes a II-VI compound semiconductor region (7) and a II-VI compound semiconductor layer (9). The II-VI compound semiconductor region (3) contains zinc, selenium and tellurium, and the II-VI compound semiconductor layer (9) contains zinc and selenium. The metal electrode (5) is provided on said superlattice contact semiconductor region (3) and the metal electrode (5) is electrically bonded to the first II-VI compound semiconductor layer (9).
Inventors:
Takao Nakamura
Koji Katayama
Daiki Mori
Koji Katayama
Daiki Mori
Application Number:
JP2003362171A
Publication Date:
May 14, 2008
Filing Date:
October 22, 2003
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L33/06; H01L33/28; H01S5/327
Domestic Patent References:
| JP10326941A | ||||
| JP9092930A | ||||
| JP4087382A | ||||
| JP2133979A | ||||
| JP9116234A | ||||
| JP2000049091A | ||||
| JP2003078157A | ||||
| JP6508003A | ||||
| JP8222811A | ||||
| JP4106986A | ||||
| JP2002261017A | ||||
| JP2002016051A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Yoshiki Kuroki
Ichira Kondo
Shiro Terasaki
Yoshiki Kuroki
Ichira Kondo