Title:
SEMICONDUCTOR PHOTO DETECTOR AND SEMICONDUCTOR OPTICAL STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2001332758
Kind Code:
A
Abstract:
To provide a sensitive semiconductor photo detector, and a semiconductor optical storage device.
A channel layer is formed so that the facet surface of a polygonal pyramid etch pit that is formed in lamination semiconductor structure is covered, and, furthermore, a hole accumulation layer that is pitched by a pair of barrier layers is formed along a channel layer. In addition, an electrode is formed on upper and lower surfaces of the lamination semiconductor structure, and an optical window for introducing incident light to the channel or hole accumulation layer is formed.
Inventors:
SHIMA MASASHI
Application Number:
JP2000146849A
Publication Date:
November 30, 2001
Filing Date:
May 18, 2000
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L27/14; H01L21/306; H01L27/10; H01L31/10; (IPC1-7): H01L31/10; H01L21/306; H01L27/10; H01L27/14
Attorney, Agent or Firm:
Tadahiko Ito
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