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Title:
SEMICONDUCTOR POWER CONVERTER FOR HIGH VOLTAGE
Document Type and Number:
Japanese Patent JP2007252023
Kind Code:
A
Abstract:

To provide a semiconductor power converter for high voltage so constructed that multiple semiconductor module devices connected in series are installed on and joined with a common cooling body through an insulating means, wherein the insulating means effectively functions and a larger number of semiconductor module devices can be connected in series on the common cooling body so that the converter can be used for higher voltages.

The semiconductor power converter for high voltage is constructed as follows: multiple semiconductor module devices constructed by mounting a semiconductor chip on a conductive substrate in an insulated manner are connected in series; and these semiconductor module devices are joined with the common conductive cooling body with their respective conductive substrates opposed to the cooling body and a thermally-conductive insulating sheet placed between them. The conductive substrates of the semiconductor module devices are joined with the cooling body through an insulating joining means so that the insulating sheets are not short-circuited by the joining means.

COPYRIGHT: (C)2007,JPO&INPIT


Inventors:
MOCHIDA TOSHIHARU
SASAGAWA KIYOAKI
Application Number:
JP2006068536A
Publication Date:
September 27, 2007
Filing Date:
March 14, 2006
Export Citation:
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Assignee:
FUJI ELECTRIC HOLDINGS
International Classes:
H02M7/48; H01L23/40; H01L25/07; H01L25/18
Domestic Patent References:
JP2003174782A2003-06-20
JP2002171768A2002-06-14
JP2005278384A2005-10-06
JPS5426364A1979-02-27
JP2003218298A2003-07-31
Attorney, Agent or Firm:
Iwao Yamaguchi
Yoshihide Komada
Kiyoshi Matsuzaki



 
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