Title:
SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JP2000214021
Kind Code:
A
Abstract:
To provide a semiconductor pressure sensor which can be manufactured at low cost since joining operation is easy and the operation efficiency is improved.
This sensor is constituted by joining a 1st support 4 which has a 1st pressure intake 3a with a silicon substrate 2 which has a thin diaphragm 1, and joining the 1st support 4 and a 2nd support body 5 having a 2nd pressure intake 3b so that the 1st and 2nd pressure intakes 3a and 3b communicate with each other. In this case, the 1st and 2nd supports 4 and 5 provide joint surfaces 6 which slant in parallel to each other.
Inventors:
TAKAKURA NOBUYUKI
Application Number:
JP1634499A
Publication Date:
August 04, 2000
Filing Date:
January 26, 1999
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
H01L41/08; G01L9/00; G01L9/04; (IPC1-7): G01L9/04; H01L41/08
Attorney, Agent or Firm:
Junji Ando (3 others)