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Title:
SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JPS60153180
Kind Code:
A
Abstract:

PURPOSE: To contrive the improvement in characteristics by enabling the problem of the difference in coefficient of thermal expansion to be eliminated without the use of a special base or intermediate table by a method wherein a pellet of the titled sensor having a diaphragm part is adhered to the base with silicon resin which hardens at a temperature of 70°C or less.

CONSTITUTION: The pressure sensor 1 has a structure that said pellet 4 has been loaded to the top of the base 2 in such an arrangement as to block its hole 3, and coated over the surface with a coat material 5; thereafter, a package 6 having a pressure introduction cylinder 6a has been fixed to the top of the base 2. The pellet 4 is formed of silicon and consists of the annular peripheral base part 4a and the disk diaphragm part 4b. Piezoresistors 7, 7... and wiring layers extending from these piezoresistors to the top of the base part 4a are formed on the surface of the diaphragm part 4b, and each wiring layer is electrically connected via metallic fine wires 9 to a lead 8 planted to the base 2. The base 2 is made of iron, kovar, or the like. Besides, the base part 4a of the pellet is loaded to the base 2 with an adhesive 10 made of silicon resin which hardens at 70°C or less.


Inventors:
FUKASE KENJI
Application Number:
JP888784A
Publication Date:
August 12, 1985
Filing Date:
January 20, 1984
Export Citation:
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Assignee:
SANYO ELECTRIC CO
International Classes:
G01L9/04; G01L9/00; H01L29/84; (IPC1-7): G01L9/04
Attorney, Agent or Firm:
Shizuo Sano



 
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