Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2005050403
Kind Code:
A
Abstract:
To increase the writing speed and reading speed of multilevel data.
This semiconductor storage device is equipped with a plurality of bit lines BL1, BL2, a plurality of word lines WL1 to WL4 extending in directions to intersect the plurality of bit lines BL1, BL2 and a plurality of ferroelectric capacitors F1 to F8 provided at intersected parts between the bit lines BL1, BL2 and the word lines WL1 to WL4. One memory cell C1 to C4 is constituted of the plurality of ferroelectric capacitors F1 to F8 with equal anti-voltages and different stored quantities of electric charge, one electrode of which is connected with the same bit lines BL1, BL2 and the other electrode of which is connected with the different word lines WL1 to WL4.
Inventors:
NOMURA HIROSHI
Application Number:
JP2003203779A
Publication Date:
February 24, 2005
Filing Date:
July 30, 2003
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
G11C11/22; H01L21/8246; H01L27/105; (IPC1-7): G11C11/22; H01L27/105
Attorney, Agent or Firm:
Tetsuya Mori
Yoshiaki Naito
Cui Shu Tetsu
Yoshiaki Naito
Cui Shu Tetsu
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