To reduce the number of signals for controlling a semiconductor storage device from an external circuit in a configuration of performing suspension and return of a power source voltage.
A semiconductor storage device comprises: a storage circuit including a transistor having an oxide semiconductor in a semiconductor layer; a capacitative element storing charge for reading data held by the storage circuit; a charge storage circuit for controlling storage of charge into the capacitative element; a data detection circuit controlling a reading state of data; a timing control circuit creating a signal in a period immediately after supply of a power source voltage, for causing the charge storage circuit to store charge in the capacitative element by a signal of the power source voltage and a delayed signal of the power source voltage; and an inverter circuit outputting potential obtained by potential reversal of one electrode of the capacitative element.
JP2008243329A | 2008-10-09 | |||
JP2013009297A | 2013-01-10 | |||
JPH04273759A | 1992-09-29 | |||
JPS61179680A | 1986-08-12 |