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Patent Searching and Data


Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2012253753
Kind Code:
A
Abstract:

To reduce the number of signals for controlling a semiconductor storage device from an external circuit in a configuration of performing suspension and return of a power source voltage.

A semiconductor storage device comprises: a storage circuit including a transistor having an oxide semiconductor in a semiconductor layer; a capacitative element storing charge for reading data held by the storage circuit; a charge storage circuit for controlling storage of charge into the capacitative element; a data detection circuit controlling a reading state of data; a timing control circuit creating a signal in a period immediately after supply of a power source voltage, for causing the charge storage circuit to store charge in the capacitative element by a signal of the power source voltage and a delayed signal of the power source voltage; and an inverter circuit outputting potential obtained by potential reversal of one electrode of the capacitative element.


Inventors:
ENDO MASAMI
Application Number:
JP2012104690A
Publication Date:
December 20, 2012
Filing Date:
May 01, 2012
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H03K3/356; H03K19/0175; H03K19/096
Domestic Patent References:
JP2008243329A2008-10-09
JP2013009297A2013-01-10
JPH04273759A1992-09-29
JPS61179680A1986-08-12
Other References:
原央: "MOS集積回路の基礎", 超LSI入門シリーズ5, JPN6015051121, May 1992 (1992-05-01), pages 83 - 88, ISSN: 0003221055