Title:
半導体記憶装置
Document Type and Number:
Japanese Patent JP6668282
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor memory device includes a memory cell including a transistor formed of an oxide semiconductor, an insulation film, and a control electrode, and a capacitance element configured to store a charge, the memory cell being configured to store a coupling weight of a neuron model by a charge amount accumulated in the capacitance element; and a control circuit configured to output a signal as a sum of a product between input data of the memory cell and the coupling weight.
Inventors:
Chika Tanaka
Keiji Ikeda
Keiji Ikeda
Application Number:
JP2017054791A
Publication Date:
March 18, 2020
Filing Date:
March 21, 2017
Export Citation:
Assignee:
Kioxia Co., Ltd.
International Classes:
G06G7/60; G06N3/063; G11C11/54; H01L21/8242; H01L27/108
Domestic Patent References:
| JP2016219011A | ||||
| JP2009282782A | ||||
| JP2012256657A | ||||
| JP5210649A | ||||
| JP2009080892A |
Foreign References:
| US5256911 |
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken