SEMICONDUCTOR STORAGE DEVICE

Title:

SEMICONDUCTOR STORAGE DEVICE

Document Type and Number:

Japanese Patent JPH10270654

Kind Code:

A

Abstract:

To provide a semiconductor storage device wherein a thin film capacitor with a ferroelectric film is used and high integration is possible.

The device is constituted by arranging a plurality of memory cells having a thin film capacitor with a ferroelectric film 14 and a pair of electrodes 13, 15 opposed through the ferroelectric film 14, and a transfer gate transistor connected to a thin film capacitor in a matrix form. A voltage which is equivalent to the width of a hysterisis curve when a thin film capacitor is subjected to saturation polarization amounts to 5% or more and 20% or less to a voltage difference between a positive direction and a negative direction during write operation. Furthermore, a residual polarization amount when a thin film capacitor is subjected to saturation polarization is 5% or more and 30% or less to a total polarization amount when a voltage during the write operation is applied.

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Inventors:

KAWAKUBO TAKASHI
ABE KAZUHIDE
FUKUSHIMA SHIN

Application Number:

JP7631597A

Publication Date:

October 09, 1998

Filing Date:

March 27, 1997

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L27/10; G11C11/22; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; (IPC1-7): H01L27/10; G11C11/22; H01L27/108; H01L21/8242

Attorney, Agent or Firm:

Takehiko Suzue (6 outside)

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