Title:
半導体構造及びこれの製造方法
Document Type and Number:
Japanese Patent JP4516797
Kind Code:
B2
Abstract:
A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time, maintaining counter doping to control deleterious short-channel effects. The MODFET design includes a high-mobility conducting channel layer wherein the method allows the counter doping to be formed using a standard technique such as ion implantation, and further allows the high-mobility channel to be in close proximity to the counter doping without degradation of the mobility.
Inventors:
Jack O Chu
Steven Jay Coaster
Chichen Sea Ouyang
Steven Jay Coaster
Chichen Sea Ouyang
Application Number:
JP2004234182A
Publication Date:
August 04, 2010
Filing Date:
August 11, 2004
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L29/06; H01L29/78; H01L21/20; H01L21/335; H01L21/338; H01L29/778; H01L29/786; H01L29/812
Domestic Patent References:
| JP9082944A | ||||
| JP7321222A | ||||
| JP2001024192A | ||||
| JP2003077844A | ||||
| JP2002359201A | ||||
| JP2002094060A |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Tasaichi Tanae
Yoshihiro City