To provide a semiconductor substrate polishing liquid which allows a semiconductor substrate and an insulator layer to be polished at an excellent polishing speed, and to provide a method for polishing a semiconductor substrate.
The semiconductor substrate polishing liquid comprises: abrasive grains including seria particles and silica particles; a compound having a first acid dissociation constant of 7 or smaller; and a basic compound. The method for polishing a semiconductor substrate 400 having a substrate body 1 with a hollow part 3a formed therein and opened only to a surface 1a, a conductive member 7 disposed in the hollow part 3a to make TSV(through-electrode)7a, and an insulator layer 5 disposed between the substrate body 1 and the conductive member 7 in the hollow part 3a comprises a polishing step. In the polishing step, a through-electrode structure having TSV 7a is formed by using the semiconductor substrate polishing liquid to polish the substrate body 1 and the insulator layer 5 of the semiconductor substrate 400 from a backside 1b, thereby exposing the conductive member 7 from the backside 1b.
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NAKAGAWA HIROSHI
TAGUSARI TOSHINORI
SAKASHITA MASAHIRO
平野 裕之
清水 義憲
長谷川 芳樹
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