Title:
半導体基板処理装置、フォトレジストを剥離する方法、および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6592316
Kind Code:
B2
Abstract:
A method of reducing resist residue on a semiconductor substrate includes introducing ozone gas into a chemical solution effective to dissolve resist residue adhered to the semiconductor substrate. The chemical solution is circulated through a processing tank where the semiconductor substrate is immersed in the chemical solution and through a first circulation path having a first pump and a first filter. After dissolution of the resist in the processing tank, the chemical solution is circulated through a second circulation path having a second pump and a second filter and returned to the processing tank. The first filter is cleaned by circulating the chemical solution through a third circulation path that includes the first pump and the first filter while introducing ozone gas into the chemical solution. The third circulation path is a closed loop path that excludes the processing tank, the second pump and the second filter.
Inventors:
Ichiro Tamaki
Application Number:
JP2015187340A
Publication Date:
October 16, 2019
Filing Date:
September 24, 2015
Export Citation:
Assignee:
Abric Co., Ltd.
International Classes:
H01L21/027; G03F7/42; H01L21/304
Domestic Patent References:
| JP2012204546A | ||||
| JP2014107478A | ||||
| JP4256318A | ||||
| JP2004327826A | ||||
| JP2008016620A | ||||
| JP11174692A | ||||
| JP2015020100A | ||||
| JP2002096012A | ||||
| JP2012119491A |
Foreign References:
| WO2013008605A1 | ||||
| US20120255577 |