Title:
SEMICONDUCTOR THIN FILM CRYSTAL GROWTH METHOD
Document Type and Number:
Japanese Patent JP3240719
Kind Code:
B2
Abstract:
PURPOSE: To make it possible not only to reduce ion implanting work but also to enhance throughput by implanting only selectively a high dose of ions as an amorphous-like silicon thin film for a single crystallization.
CONSTITUTION: An amorphous-like silicon thin film 12 is bonded and formed on a substrate 11. Ions are selectively implanted at a specified position of this amorphous-like silicon thin film 12. A low temperature solid-phase crystallization is carried out, thereby growing a semiconductor single crystal 13. The amorphous-like silicon thin film 12 is coated and formed with a low temperature chemical vapor-phase growth at a temperature of 540°C and below. Prior to the low temperature solid-phase crystallization process after the ion implantation process, there is adopted a less than 600°C low temperature annealing process which is not produced from the solid-phase crystallization. More specifically, it is possible to shorten the latent period of a crystal core by a preliminary application of low temperature annealing where no solid-phase crystallization is carried out.
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Inventors:
Takashi Noguchi
Application Number:
JP33052392A
Publication Date:
December 25, 2001
Filing Date:
December 10, 1992
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/20; H01L21/265; H01L21/324; H01L21/336; H01L21/84; H01L29/78; H01L29/786; (IPC1-7): H01L21/20; H01L21/265; H01L21/324
Domestic Patent References:
| JP547660A | ||||
| JP461318A | ||||
| JP252419A |
Attorney, Agent or Firm:
Hidemori Matsukuma