To provide a semiconductor wavelength conversion element which can operate with a low power and can convert the wavelength into a shorter or longer wavelength region than the wavelength of the incident light.

This semiconductor wavelength conversion element has a multilayered film structure laminated on a semiconductor substrate 1, and is equipped with a means to inject a current to the multilayered film structure (such as an electrode 8) and an active layer which emits light by injection of the current. The active layer consists of a semiconductor quantum fine structure consisting of a quantum wire 4 in which the confinement size of electrons by a semiconductor hetero structure is ≤100 nm and the confinement of electrons is performed in two dimensions or more.