Title:
SEMIICONDUCTOR XXRAY DETECTOR
Document Type and Number:
Japanese Patent JPS52142573
Kind Code:
A
Abstract:
In the illustrated embodiments a row of semiconductor diodes is provided with intervening fluorescent layers and with fluorescent layers at the opposite ends. The x-radiation may impinge on one end of the detector such that the additional layers provide increased sensitivity. In a second embodiment, the radiation impinges laterally of the detector so that each fluorescent layer receives an individual sample of the impinging radiation, and the output from respective diodes may be individually stored as a measure of the respective samples. In an illustrated x-ray tomographic apparatus, the edge faces of the fluorescent layers are equidistant from the focus of the x-ray tube so as to sample successive portions of a fan-shaped x-ray beam.
Inventors:
GUNTAA RUUDERAA
BURUKUHARUTO WAINKAUFU
RAINAA RIIBETORUUTO
BURUKUHARUTO WAINKAUFU
RAINAA RIIBETORUUTO
Application Number:
JP15563276A
Publication Date:
November 28, 1977
Filing Date:
December 23, 1976
Export Citation:
Assignee:
SIEMENS AG
International Classes:
A61B6/03; G01T1/20; G01T1/24; G01N23/04; G01T1/29; H01L31/09; H01L31/115; (IPC1-7): A61B6/00; G01T1/24; H01L31/00
Domestic Patent References:
| JPS4842786A | 1973-06-21 | |||
| JP39020773A |