Title:
SEPARATION METHOD FOR INSULATOR FILM
Document Type and Number:
Japanese Patent JPS5372581
Kind Code:
A
Abstract:
PURPOSE:To obtain a flat separating insulator film by etching and removing the field area by masking the element forming area on a semiconductor substrate surface with a polyimide layer and filling the field area with SiO2 film through the CVD method.
Inventors:
TANIGAWA YOSHIKI
SUGITA MASAO
SUGITA MASAO
Application Number:
JP14856476A
Publication Date:
June 28, 1978
Filing Date:
December 10, 1976
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/76; (IPC1-7): H01L21/76